Ion implanter and ion implantation method

An ion implanter comprising:

• a beam generation device configured to operate in accordance with a plurality of operation parameters to generate an ion beam;
• an implantation processing chamber in which a workpiece is irradiated with the ion beam;
• a measurement device that measures a beam characteristic of the ion beam;
• a memory that stores a model for estimating the beam characteristic from a set of setting values of the plurality of operation parameters, and a predetermined program;
• and
• a processor that executes the predetermined program,
• wherein in accordance with the predetermined program,
• the processor updates the model by using a plurality of measurement values of the beam characteristic measured when each of a plurality of sets of the setting values of the plurality of operation parameters is set as the plurality of operation parameters, and a plurality of estimated values of the beam characteristic estimated by using the model from each of the plurality of sets, and
• the processor determines a target set of the setting values of the plurality of operation parameters for generating an ion beam which satisfies a desired beam characteristic by using the updated model.