Data preservation after a supply voltage decrease in a memory system

A non-transitory computer-readable medium storing code, the code comprising instructions executable by one or more processors to cause a memory system to:

• determine whether a first supply voltage for a non-volatile memory device of the memory system has decreased below a first threshold level;
• write, in response to the first supply voltage having decreased below the first threshold level and in response to a second supply voltage for a controller of the memory system having been maintained above a second threshold level, data from a non-retention area of a volatile memory to a retention area of the volatile memory before resetting the memory system, the data intended for storage in the non-volatile memory device of the memory system;
• write, after resetting the memory system, the data from the retention area of the volatile memory to the non-retention area of the volatile memory;
• and
• write, in response to writing the data from the retention area of the volatile memory to the non-retention area of the volatile memory, the data from the non-retention area of the volatile memory to the non-volatile memory device.

A method, comprising:

• determining whether a first supply voltage for a non-volatile memory device of a memory system has decreased below a first threshold level;
• writing, in response to the first supply voltage having decreased below the first threshold level and in response to a second supply voltage for a controller of the memory system having been maintained above a second threshold level, data from a non-retention area of a volatile memory to a retention area of the volatile memory before resetting the memory system, the data intended for storage in the non-volatile memory device of the memory system;
• writing, after resetting the memory system, the data from the retention area of the volatile memory to the non-retention area of the volatile memory;
• and
• writing, in response to writing the data from the retention area of the volatile memory to the non-retention area of the volatile memory, the data from the non-retention area of the volatile memory to the non-volatile memory device.