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US 2026/0290442 A1Published application
Volatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Heung Kim, Taeyoung Oh, Hyongryol Hwang
Life of this patent
Estimating the term…
Abstract
A memory device includes a bank connected to a plurality of wordlines, a first global input and output (GIO) line, and a second GIO line formed to have a larger length than the first GIO line in a column direction. One of the first GIO line and the second GIO line may be allocated for metadata.
Claims20
A memory device comprising:
- a bank connected to a plurality of wordlines;
- a first global input and output (GIO) line having a first length in a column direction;
- a second GIO line having a second length in the column direction that is larger than the first length;
- and
- a row decoder configured to simultaneously select a first wordline and a second wordline among the plurality of wordlines,
- wherein the first GIO line is configured to input or output normal data based on an activation of the first wordline, and the second GIO line is configured to simultaneously input or output metadata corresponding to the normal data based on an activation of the second wordline.
3 more elements
A memory system comprising:
- a memory controller configured to transmit a command;
- and
- a memory device configured to write or read data based on the command, the memory device comprising:
- a bank connected to a plurality of wordlines;
- a first global input and output (GIO) line having a first length in a column direction;
- a second GIO line having a second length in the column direction that is larger than the first length;
- and
- a row decoder configured to simultaneously select a first wordline and a second wordline among the plurality of wordlines based on the command,
- wherein the first GIO line is configured to input or output normal data based on an activation of the first wordline, and the second GIO line is configured to simultaneously input or output metadata corresponding to the normal data based on an activation of the second wordline.
6 more elements
A method of operating a memory device, the method comprising:
- receiving a command to access normal data and corresponding metadata;
- simultaneously activating, by a row decoder, a first wordline and a second wordline connected to a bank;
- and
- simultaneously inputting or outputting the normal data via a first global input and output (GIO) line based on the activation of the first wordline, and the metadata via a second GIO line based on the activation of the second wordline,
- wherein the first GIO line has a first length in a column direction and the second GIO line has a second length in the column direction that is larger than the first length.
2 more elements
Dependencies are inferred from the claim text.