3d-dram with open digit line quilt layout

An apparatus comprising:

• a first 3D memory patch including a plurality of first memory cells arranged in a3D array in X, Y and Z directions, the plurality of first memory cells divided into a plurality of first sets of memory cells and each of the first sets of memory cells is coupled to an associated one of a plurality of first global digit lines;
• a second 3D memory patch including a plurality of second memory cells arranged in a3D array in the X, Y and Z directions, the plurality of second memory cells divided into a plurality of second sets of memory cells and each of the plurality of second sets of memory cells is coupled to an associated one of a plurality of second global digit lines;
• a plurality of first sense amplifiers arranged, at least in part, above the first 3D memory patch, wherein the plurality of first sense amplifiers are coupled to ones of the plurality of first global digit lines and ones of the plurality of second global digit lines, respectively;
• and
• a plurality of second sense amplifiers arranged, at least in part, above the second 3D memory patch, wherein the plurality of second sense amplifiers are coupled to remaining ones of the plurality of first global digit lines and remaining ones of the plurality of second global digit lines, respectively.

An apparatus comprising:

• a word line extending in a first direction and coupled to a first memory cell and a second memory cell;
• a first local digit line extending a second direction orthogonal to the first direction, the first local digit line coupled to the first memory cell;
• a second local digit line extending in the second direction, the second local digit line coupled to the second memory cell;
• a first global digit line extending a third direction orthogonal to the first and the second direction, the first global digit line coupled to the first local digit line;
• a second global digit line extending in the third direction, the second global digit line coupled to the second local digit line, wherein the first and the second global digit lines are adjacent to each other;
• a first sense amplifier coupled to the first global digit line;
• and
• a second sense amplifier coupled to the second global digit line, wherein the first sense amplifier and the second sense amplifier are adjacent to each other and are positioned above the global digit lines in the second direction.