Array organization in three-dimensional memory circuits
AssigneeSamsung Electronics Co., Ltd.
InventorsMoon Chan HWANG, Daesik SONG, Jong Hun PARK
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AssigneeSamsung Electronics Co., Ltd.
InventorsMoon Chan HWANG, Daesik SONG, Jong Hun PARK
Estimating the term…
A system and a method for organizing a 3D memory circuit are disclosed. The 3D memory circuit includes a memory array and an activation circuit. The memory array is configured to be organized into N sections. Each section has a row dimension K, a column dimension L, and a word line (WL) connected to L memory cells. The activation circuit is configured to activate, in response to an activation, the WL to generate an activated WL. Each section includes a transfer circuit including a data switch and a select switch. The data switch is configured to route data between a local input/output (LIO) line and a global input/output (GIO) line. The select switch is configured to connect the LIO line to a bit line (BL) by a column select (CS) signal. The BL is connected to one of the L memory cells which is connected to the activated WL.
A device comprising:
A method comprising:
A system comprising:
Dependencies are inferred from the claim text.