Pixel, Display Device and, Driving Method of the Display Device

A method for operating a display panel, the display panel having a plurality of pixels, a gate driver configured to apply a scan signal to the plurality of pixels, a data driver configured to apply a data voltage to the plurality of pixels through a data line, a power supply unit configured to apply a driving voltage to the plurality of pixels, and a timing controller configured to control an operation of the gate driver, the data driver and the power supply unit, wherein each of the plurality of pixels includes:

• a light emitting element formed of a plurality of light emission units;
• a driving transistor having a first electrode connected to a high potential driving voltage, a gate electrode connected to a first node, and a second electrode connected to an anode electrode of the light emitting element through a second node;
• a first transistor connected between the data line and the first node and having a gate electrode configured to receive a first scan signal;
• a second transistor connected between a readout line to which a reference voltage is applied and the second node and having a gate electrode configured to receive a second scan signal;
• a third transistor having a first electrode connected to a first voltage, a second electrode connected to the second node, and a gate electrode configured to receive the first scan signal;
• and a storage capacitor connected between the first node and the second node, the method comprising:
• applying the first scan signal in a turn-on level and applying a data voltage to the data line in a first period in an active period in one frame;
• converting the first scan signal into a turn-off level and applying the second scan signal in a turn-on level in a second period;
• and
• applying the second scan signal in a turn-off level in the third period.

A pixel, comprising:

• a substrate including an emission region and a non-emission region around the emission region;
• at least one thin film transistor formed on the substrate;
• an auxiliary electrode formed on the substrate and disposed in the non-emission region;
• an inter-layer insulating stack formed on the at least one thin film transistor and the auxiliary electrode;
• and
• a light emitting element formed on the inter-layer insulating stack, disposed in the emission region, and having an anode electrode, a plurality of light emission units, a charge generation layer interposed between the plurality of light emission units, and a cathode electrode which are stacked in a thickness direction,
• wherein the at least one thin film transistor includes:
• a driving transistor including a first electrode connected to a high potential driving voltage, a gate electrode connected to a first node and a second electrode connected to the anode electrode through a second node;
• and
• a switching transistor including a first electrode connected to a first voltage and a second electrode connected to the second node, and
• wherein the cathode electrode is electrically connected to the auxiliary electrode through a contact hole penetrating the inter-layer insulating stack.