Positive resist for dry development, method for manufacturing semiconductor devices using the same and multilayered structure formed using the same
AssigneesSamsung Electronics Co., Ltd., Inha University Research and Business Foundation
InventorsSung Il Lee, Jin-Kyun Lee, Gayoung Kim, Jin Choi, Changyoung Jeong
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Abstract
A positive resist for dry development includes tin oxide nanoclusters, and a compound having Lewis basicity. The tin oxide nanoclusters includes a core structure having tin oxide. At least a portion of the tin oxide nanoclusters includes organic ligands bonded to the core structure. The organic ligands include alkyl groups having 1-20 carbon atoms bonded to a tin element in the core structure.
Claims20
A positive resist for dry development, the positive resist comprising:
- tin oxide nanoclusters;
- and
- a compound having Lewis basicity,
- wherein the tin oxide nanoclusters comprise a core structure comprising tin oxide.
A method for manufacturing a semiconductor device, the method comprising:
- forming an etch target layer on a substrate;
- forming a positive resist on the etch target layer;
- performing an exposure process on the positive resist;
- and
- performing a dry development process to selectively remove an exposure region of the positive resist,
- wherein the positive resist comprises:
- tin oxide nanoclusters;
- and
- a compound having Lewis basicity,
- wherein the tin oxide nanoclusters comprise a core structure comprising tin oxide.
Dependencies are inferred from the claim text.