Substrate processing method and substrate processing device

A substrate processing device comprising:

• a stage on which a substrate having, on a first surface, a first region and a second region provided inside the first region is placeable, the stage being capable of rotating the substrate in a substantially horizontal direction;
• a first nozzle provided above the stage, the first nozzle being capable of feeding a first liquid to the second region of the substrate placed on the stage;
• a second nozzle provided above the stage, the second nozzle being capable of feeding a second liquid different from the first liquid to the first region of the substrate placed on the stage;
• a gas feeder that is capable of feeding cooling gas to a second surface of the substrate opposite to the first surface, the substrate being placed on the stage;
• and
• an electric controller that controls the stage, the first nozzle, the second nozzle, and the gas feeder, wherein
• the electric controller:
• causes the first liquid to be ejected from the first nozzle to form a liquid film of the first liquid in the second region of the substrate;
• causes the cooling gas to be fed from the gas feeder to solidify the liquid film;
• and
• causes the second liquid to be ejected from the second nozzle to feed the second liquid to the first region of the substrate on which the liquid film has been solidified,
• the first region and the second region are different in magnitude relationship between a dispersive component and a polar component in surface free energy, and
• a magnitude relationship between a dispersive component and a polar component in surface free energy of the first liquid is equal to the magnitude relationship in the second region.