Electro-optic device, method of manufacturing electro-optic device, and electronic apparatus

Abstract

An electro-optic device of the present disclosure includes a transistor disposed at a substrate. The transistor includes a semiconductor layer including a channel region, a source region, and a drain region and extending along a first direction, and a gate electrode facing the channel region via an insulating film. An impurity is added to a part of the channel region. In the first direction, an impurity concentration in a central region of the channel region and an impurity concentration in side regions at both sides of the central region are different from each other.

Dependencies are inferred from the claim text.