Electroabsorption modulator
AssigneeOptoway Technology Inc.
InventorsMeng-Lun Tsai, Jung-Wei Yen
Life of this patent
Estimating the term…
Abstract
An electroabsorption modulator is provided. The electroabsorption modulator includes: a substrate; a waveguide region, located on a first surface of the substrate and including an optical waveguide and a pair of trenches, wherein the pair of trenches are located on two sides of the optical waveguide and have a first depth; at least one groove, located on an outer side of the waveguide region and having a second depth greater than the first depth; and a first dielectric layer, located in the groove, wherein the first dielectric layer includes a central portion, and a first thickness of the central portion of the first dielectric layer is substantially equal to the second depth.
Claims20
An electroabsorption modulator, comprising:
- a substrate;
- a waveguide region, located on a first surface of the substrate, the waveguide region comprising:
- an optical waveguide, and
- a pair of trenches, located on two sides of the optical waveguide, wherein the trench has a first depth;
- at least one groove, located on an outer side of the waveguide region and having a second depth, wherein the second depth is greater than the first depth;
- and
- a first dielectric layer, located in the groove, wherein the first dielectric layer comprises a central portion, and a first thickness of the central portion of the first dielectric layer is substantially equal to the second depth.
An electroabsorption modulator, comprising:
- a substrate;
- a waveguide region, located on a first surface of the substrate, the waveguide region comprising:
- an optical waveguide,
- wherein the substrate under the optical waveguide has a multi-quantum well structure, and the multi-quantum well structure has a bottom portion;
- at least one groove, located on an outer side of the waveguide region and having a depth, wherein the depth exceeds the bottom portion of the multi-quantum well structure;
- and
- a first dielectric layer, located in the groove, wherein the first dielectric layer comprises a central portion, and a first thickness of the central portion of the first dielectric layer is substantially equal to the depth of the groove.
Dependencies are inferred from the claim text.