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US 2026/0287914 A1Published application
Optical system, in particular for characterizing a microlithography mask
AssigneeCarl Zeiss SMT GmbH
InventorsUlrich Matejka, Sascha Perlitz, Johannes Ruoff
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Abstract
The invention relates to an optical system and, in particular for characterizing a microlithography mask, comprising a light source for generating light of a wavelength of less than 30 nm, an illumination beam path leading from the light source to an object plane, an imaging beam path leading from the object plane to an image plane and a beam splitter, via which both the illumination beam path and the imaging beam path run.
Claims20
An extreme ultraviolet (EUV) optical system comprising:
- an EUV light source for generating EUV light of a wavelength of less than 30 nm;
- an EUV illumination beam path leading from the EUV light source to an object plane;
- an EUV imaging beam path leading from the object plane to an image plane;
- and
- an EUV beam splitter, via which both the EUV illumination beam path and the EUV imaging beam path run;
- wherein the EUV light in the EUV illumination beam path is reflected at the EUV beam splitter and the EUV light in the EUV imaging beam path is transmitted through the EUV beam splitter.
3 more elements
Dependencies are inferred from the claim text.