Gate charge de-embedding

Abstract

A method of measuring a gate charge of a semiconductor transistor comprising a source, a drain and a gate, the method comprises: determining a total gate to source capacitance (Cgstot); determining a drain to system capacitance (Cdsys), wherein the system comprises a probe for contacting the transistor; determining a total gate to drain capacitance (Cgdtot); determining a parasitic drain capacitance (Cgdp), using the drain to system capacitance (Cdsys) and the total gate to drain capacitance (Cgdtot); measuring a gate voltage and a drain voltage over time, while providing a constant gate current (Ig); and calculating a de-embedded gate charge from the constant gate current, the measured gate voltage, the measured drain voltage, the total gate to source capacitance, and the parasitic drain capacitance.

Dependencies are inferred from the claim text.