Apparatus and method for electromagnetic side-channel leakage localization on processors

A method for electromagnetic side-channel leakage localization, the method comprising:

• executing a command gadget in the form of a specific command being repeated at a fixed clock cycle, by an integrated circuit (IC) chip;
• measuring an electromagnetic wave signal while moving over an upper surface of the IC chip based on a searching grid, by a probe;
• measuring a power density of a sideband peak of amplitude modulation, by using the electromagnetic wave signal, by a spectrum analyzer;
• creating a leakage map with respect to a surface of the IC chip, by the spectrum analyzer;
• and
• estimating a side-channel leakage point of the IC chip by analyzing the leakage map, by a leakage point analyzer.

An apparatus for electromagnetic side-channel leakage localization, the apparatus comprising:

• a signal generator configured to input an input signal of a specific frequency into an input terminal comprising a power supply rail of an integrated circuit (IC) chip or an element connected to the power supply rail;
• a probe configured to measure an electromagnetic wave signal while moving over an upper surface of the IC chip based on a searching grid when intermodulation distortion between an operation clock of the IC chip and the input signal occurs;
• a spectrum analyzer configured to measure a power density of an intermodulation distortion peak by using the electromagnetic wave signal, and create a leakage map with respect to a surface of the IC chip;
• and
• a leakage point analyzer configured to estimate a side-channel leakage point of the IC chip by analyzing the leakage map.

A method for electromagnetic side-channel leakage localization, the method comprising:

• inputting an input signal of a specific frequency into an input terminal comprising a power supply rail of an integrated circuit (IC) chip or an element connected to the power supply rail, by a signal generator;
• measuring an electromagnetic wave signal while moving over an upper surface of the IC chip based on a searching grid, when intermodulation distortion between an operation clock of the IC chip and the input signal occurs, by a probe;
• measuring a power density of an intermodulation distortion peak by using the electromagnetic wave signal, by a spectrum analyzer;
• creating a leakage map with respect to a surface of the IC chip, by the spectrum analyzer;
• and
• estimating a side-channel leakage point of the IC chip by analyzing the leakage map, by a leakage point analyzer.