Field effect transistor and method for manufacturing same

A field effect transistor comprising:

• a substrate including a semiconductor;
• an oxide layer located on the substrate;
• a source electrode and a drain electrode that are located spaced apart from each other in a first direction of the oxide layer;
• a first gate electrode and a second gate electrode that are located spaced apart from each other in a second direction of the oxide layer;
• a transducer located to connect the source electrode and the drain electrode;
• and
• a detection layer located on the transducer,
• wherein the detection layer includes:
• a bioreceptor located on the transducer;
• and
• a zwitterionic buffer that provides transistor characteristics to the transducer.

A method of manufacturing a field effect transistor, the method comprising:

• manufacturing a base structure in which a source electrode and a drain electrode, located spaced apart from each other in a first direction, are arranged on an oxide layer located on a substrate including a semiconductor and a transductor is provided to connect the source electrode and the drain electrode;
• immobilizing a linker on a transducer of the base structure;
• immobilizing a bioreceptor on the linker;
• and
• applying a zwitterionic buffer that is coupled to at least a portion of the transducer to provide transistor characteristics.