High temperature pressure sensor module

A pressure sensor module comprising:

• a carrier comprising a chemical compound including lanthanum and gallium;
• a signal conditioning circuit die disposed on the carrier, the signal conditioning die comprising a substrate layer including:
• an n-type silicon carbide (SiC) wafer,
• an epitaxial SiC layer disposed on the wafer, and
• one or more transistors disposed on the substrate layer;
• and
• a pressure transducer die disposed on the carrier, adjacent to the signal conditioning circuit die, the pressure transducer die comprising:
• a membrane,
• a plurality of metal contacts disposed on a first side of the membrane,
• a first cavity etched into a second side of the membrane and configured as a first side of a first piezoelectric pressure transducer, and
• a second cavity etched into the second side of the membrane and configured as a first side of a second piezoelectric pressure transducer, wherein
• the carrier is bonded to the second side of the membrane such that the carrier forms a second side to the first piezoelectric pressure transducer and a second side to the second piezoelectric pressure transducer.

A signal conditioning circuit die comprising:

• a substrate layer, the substrate layer including:
• an n-type silicon carbide (SiC) wafer, and
• an epitaxial SiC layer disposed on the wafer;
• an aluminum layer implanted into the epitaxial SiC layer;
• one or more transistors disposed on the aluminum layer, the transistors including:
• an n-type channel region comprising phosphorous or nitrogen,
• an n-type source region, comprising phosphorous or nitrogen, implanted on a first end of the channel,
• an n-type drain region, comprising phosphorous or nitrogen, implanted on a second end of the channel,
• a p-type gate wrapped around the channel region between the first end and the second end, the gate comprising aluminum, and
• contact pads disposed on the source region, the drain region, and the gate.