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OwnerChang Bong YEON, Jae Sun JUNGinventors
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The present invention relates to a low-temperature deposition material, a method of forming a low-temperature deposition film, and a semiconductor substrate and semiconductor device fabricated using the same. According to the present invention, by applying a predetermined substance that is capable of acting as a strong reducing agent even in low-temperature processes, a low-resistance thin film and/or a metal nitride film may be effectively manufactured in a low-temperature process. In addition, film impurities due to ligands such as carbon may be reduced, and resistivity and physical properties such as crystallinity may be improved.
A low-temperature deposition material for a wiring metal, a metal having a melting point of 350° C. or less, or a wiring metal diffusion barrier, comprising one or more selected from a compound having a direct bond between hydrogen (H) and iodine, a compound having a direct bond between carbon (C) and iodine, and a compound having a direct bond between a halogen element (F, Cl, Br) and iodine.
Dependencies are inferred from the claim text.