An atomic layer deposition apparatus and a method for coating a substrate
AssigneeBeneq Oy
InventorsAlexander PERROS, Zhen ZHU
Life of this patent
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Abstract
An atomic layer deposition apparatus and a method in which the apparatus comprising a reaction chamber, an electrode assembly arranged in connection with a top wall, a counter electrode arranged opposite the electrode assembly, a reaction zone is formed between the electrode assembly and the counter electrode, a precursor supply opening via which the precursors are supplied to the reaction space, a connecting element arranged between the electrode assembly and the top wall, a dielectric layer provided on an inner surface of the top wall, and a gap formed between a upper surface of the electrode assembly and the dielectric layer for providing a flow path for a blocking gas to prevent a precursor film formation.
Claims17
An atomic layer deposition apparatus for processing a surface of a substrate successively with at least a first precursor and a second precursor according to principles of atomic layer deposition, the apparatus comprising:
- a reaction chamber having a top wall, a bottom wall and at least one side wall, said walls forming a reaction space inside the reaction chamber
- an electrode assembly arranged in connection with the top wall,
- a counter electrode arranged opposite the electrode assembly at a distance from said electrode assembly such that a reaction zone is formed between the electrode assembly and the counter electrode, and
- a precursor supply opening via which the precursors are supplied to the reaction space
- the apparatus further comprising:
- a connecting element arranged between the electrode assembly and the top wall of the reaction chamber such that the electrode assembly is connected to the top wall through the connecting element,
- a dielectric layer provided on an inner surface of the top wall of the reaction chamber,
- a gap formed between an upper surface of the electrode assembly and the dielectric layer of the inner surface of the top wall of the reaction chamber for providing a flow path for a blocking gas to prevent a precursor film formation between the electrode assembly and the reaction chamber, the gap extending between the connecting element and an outer perimeter of the electrode assembly, and is open to the reaction space through the outer perimeter of the electrode assembly, and
- a gas supply opening that opens into the gap for supplying blocking gas from a blocking gas channel to the gap.
A method for coating a substrate in a plasma ALD reaction chamber by subjecting a surface of the substrate to successive surface reactions of a first precursor and a second precursor according to the principles of atomic layer deposition in the reaction chamber comprising:
- a top wall, a bottom wall and at least one side wall, said walls forming a reaction space inside the reaction chamber, an electrode assembly arranged in connection with the top wall, a counter electrode arranged opposite the electrode assembly at a distance from said electrode assembly, a reaction zone provided between the electrode assembly and the counter electrode, and a precursor supply opening via which the precursors are supplied to the reaction zone, wherein the method comprises:
- arranging a substrate in the reaction zone
- supplying blocking gas from a blocking gas channel through a gas supply opening to a gap formed between a-an upper surface of the electrode assembly and a dielectric layer provided on an inner surface of the top wall,
- supplying precursor from a precursor gas source through the precursor supply opening to the reaction zone,
- directing the blocking gas along the gap towards the reaction zone for preventing the precursor from entering the gap, and
- generating plasma discharge to the reaction zone with the electrode assembly.
Dependencies are inferred from the claim text.