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US 2026/0286186 A1Published application
Polishing slurry and method of manufacturing semiconductor device
AssigneesSamsung Electronics Co., Ltd., UIF (University Industry Foundation), Yonsei University
InventorsYongtae Park, Byeong-Su KIM, WOOSUNG JEON, DOYOON KIM, Nohjun Park, Aram Shin, Byungwoo Yoo, JAEHOON RYU, Yeonah Jeong
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Abstract
Disclosed are a polishing slurry and a method of manufacturing a semiconductor device, the polishing slurry that includes: a branched polymer including a hydrophobic unit, a micelle of the branched polymers, or a combination thereof, and a dispersion medium.
Claims20
A polishing slurry, comprising:
- a branched polymer including a hydrophobic unit, a micelle of the branched polymers, or a combination thereof, and
- a dispersion medium.
A method of manufacturing a semiconductor device, the method comprising:
- forming a conductive layer on a dielectric layer with a trench,
- supplying polishing slurry onto the conductive layer, and
- performing chemical mechanical polishing on the conductive layer to form a conductive pattern embedded in the trench,
- wherein the polishing slurry comprises a branched polymer comprising a hydrophobic unit, a micelle of the branched polymers, or a combination thereof, and a dispersion medium.
1 more element
A micelle of branched polymers, the micelle comprising:
- a core in which the hydrophobic units are assembled, and
- a shell comprising a polymer segment, the polymer segment including hydrophilic functional groups and one or more structural units derived from glycerol, ethylene glycol, propylene glycol, ethylene imine, piperazine, trimethylolpropane, sorbitol, acrylic acid, methacrylic acid, a derivative thereof, or a combination thereof,
- wherein a particle size of the micelle measured by a dynamic light scattering method in an aqueous medium is about 1 nm to about 50 nm.
Dependencies are inferred from the claim text.