Semiconductor structure, fabrication method and package structure thereof
AssigneeVanguard International Semiconductor Corporation
InventorsHsiu-Mei Yu, Bing-Yu Lin, Wei-Chan Chang
Life of this patent
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Abstract
A semiconductor structure includes a substrate, a semiconductor layer, a metal carrier, a top metal layer, a redistribution layer and a dielectric material. The substrate has a front surface and a bottom surface. The semiconductor layer is disposed on the front surface of the substrate. The metal carrier is disposed under the bottom surface of the substrate. The top metal layer is disposed on the semiconductor layer. The redistribution layer is electrically connected to the top metal layer. The dielectric material is disposed above the semiconductor layer, and the redistribution layer is embedded in the dielectric material.
Claims20
A semiconductor structure, comprising:
- a substrate, having a front surface and a bottom surface;
- a semiconductor layer, disposed on the front surface of the substrate;
- a metal carrier, disposed under the bottom surface of the substrate;
- a top metal layer, disposed on the semiconductor layer;
- a redistribution layer, electrically connected to the top metal layer;
- and
- a dielectric material, disposed above the semiconductor layer, wherein the redistribution layer is embedded in the dielectric material.
A method of fabricating a semiconductor structure, comprising:
- providing an initial substrate having a front side and a back side;
- forming a semiconductor layer on the front side of the initial substrate;
- forming a top metal layer on the semiconductor layer;
- forming a groove in both the semiconductor layer and the initial substrate;
- grinding the back side of the initial substrate to reduce a thickness of the initial substrate to form a substrate after the groove is formed;
- providing a metal carrier to be bonded to the substrate;
- forming a redistribution layer above the semiconductor layer, wherein the redistribution layer is electrically connected to the top metal layer;
- forming a dielectric material to cover the substrate and fill up the groove, wherein the redistribution layer is embedded in the dielectric material;
- and
- cutting the dielectric material, the substrate and the metal carrier along the groove to form a plurality of semiconductor structures separated from each other.
Dependencies are inferred from the claim text.