Semiconductor structure and manufacturing method thereof

A semiconductor structure, comprising:

• a redistribution circuit structure, comprising:
• a plurality of dielectric layers;
• a plurality of horizontal connection structures, arranged alternatively with the plurality of dielectric layers, wherein the plurality of horizontal connection structures are electrically coupled to each other;
• and
• a plurality of vertical connection structures, penetrating through the plurality dielectric layers and next to the plurality of horizontal connection structures;
• a plurality of first dies, disposed over a first side of the redistribution circuit structure and electrically coupled to the redistribution circuit structure;
• a plurality of second dies, disposed over a second side the redistribution circuit structure and electrically coupled to the redistribution circuit structure, wherein the first side is opposite to the second side;
• and
• a bonding structure, disposed over and electrically coupled to the plurality of second dies, wherein the plurality of second dies is disposed between the redistribution circuit structure and the bonding structure, and the redistribution circuit structure is disposed between the plurality of first dies and the plurality of second dies.

A semiconductor structure, comprising:

• a first tier, comprising at least one first die;
• a second tier, disposed over and electrically coupled to the first tier, and comprising at least one second die;
• a redistribution circuit structure, disposed between and electrically coupled to the first tier and second tier;
• and
• a vertical connection structure, penetrating through the redistribution circuit structure, wherein in a cross-section of the semiconductor structure, the vertical connection structure comprises one of a through via having a planar sidewall or a plurality of stacked vias stacked on one another and arranged in a concentric manner.