Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Ming Chen, Yung-Chi Lin
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Abstract
A wafer on wafer on wafer and a chip on wafer on wafer structure and methods of forming the same are provided. In accordance with some embodiments, a first device wafer is bonded to a first carrier through wafer-on-wafer bonding and additional device wafers may subsequently be bonded to the first device wafer. A support wafer is then bonded to the top most device wafer and the first wafer may then be removed. The bonded wafer structure may then be singulated into individual semiconductor device packages. Through the wafer-on-wafer bonding process, the manufacturing cost and cycle time may be reduced.
Claims20
A method comprising:
- bonding a first device wafer to a first support wafer;
- bonding a second device wafer to the first device wafer;
- bonding a second support wafer to the second device wafer;
- and
- performing a singulation process along a first scribe line, wherein the first scribe line runs through the first device wafer, the second device wafer, and the second support wafer.
A method of manufacturing a semiconductor device comprising:
- bonding a first device wafer over a first carrier wafer;
- performing a first edge trimming process on the first carrier wafer and the first device wafer to form a recess, wherein the recess exposes sidewalls of the first carrier wafer and the first device wafer, wherein the sidewalls of the first carrier wafer and the first device wafer are coplanar, and wherein the first device wafer has a first area in a top-down view after performing the edge trimming process;
- bonding a second device wafer over the first device wafer, wherein the second device wafer has a second area that is substantially the same as the first area in the top-down view;
- bonding a second carrier wafer over the second device wafer;
- and
- removing the first carrier wafer after the bonding the second carrier wafer over the second device wafer.
A method comprising:
- bonding a first device die and a second device die to a first bonding layer of a first carrier wafer;
- forming a second bonding layer over the first device die and the second device die;
- bonding a first device wafer to the second bonding layer;
- performing a first edge trimming process on the first device wafer and the first carrier wafer;
- and
- performing a singulation process along a first scribe line, wherein the a first scribe line runs through the first device wafer and between the first device die and the second device die.
Dependencies are inferred from the claim text.