Semiconductor Device and Method of Forming an Antenna-in-Package Structure
AssigneeJCET STATS ChipPAC Korea Limited
InventorsYeJin Park, SeungHyun Lee, HeeSoo Lee
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Abstract
A semiconductor device has a substrate including an antenna formed in a first area of the substrate. An electrical component is disposed over a second area of the substrate. An interconnect structure is disposed over a third area of the substrate. A first encapsulant is deposited over the electrical component and interconnect structure. A second encapsulant is disposed over the antenna. The second encapsulant includes a higher dielectric constant than the first encapsulant.
Claims25
A method of making a semiconductor device, comprising:
- providing a substrate including an antenna formed in a first area of the substrate, wherein a thickness of the first area of the substrate is greater than a thickness of a second area of the substrate and also greater than a thickness of a third area of the substrate;
- disposing an electrical component over the second area of the substrate;
- disposing an interconnect structure over the third area of the substrate;
- depositing a first encapsulant over the electrical component and interconnect structure, wherein the first encapsulant extends over only the second area and third area without extending over the first area after depositing the first encapsulant;
- and
- disposing a second encapsulant over the antenna, wherein the second encapsulant includes a higher dielectric constant than the first encapsulant, and wherein the second encapsulant includes a trapezoidal portion over the antenna.
A method of making a semiconductor device, comprising:
- providing a substrate including an antenna formed in a first area of the substrate, wherein a thickness of the first area of the substrate is greater than a thickness of a second area of the substrate;
- disposing an electrical component over the second area of the substrate;
- depositing a first encapsulant over the electrical component;
- and
- disposing a second encapsulant over the antenna, wherein the second encapsulant includes a higher dielectric constant than the first encapsulant.
A semiconductor device, comprising:
- a substrate including an antenna formed in a first area of the substrate, wherein a thickness of the first area of the substrate is greater than a thickness of a second area of the substrate and also greater than a thickness of a third area of the substrate;
- an electrical component disposed over the second area of the substrate;
- an interconnect structure disposed over the third area of the substrate;
- a first encapsulant deposited over the electrical component and interconnect structure, wherein the first encapsulant extends over only the second area and third area without extending over the first area after depositing the first encapsulant;
- and
- a second encapsulant disposed over the antenna, wherein the second encapsulant includes a higher dielectric constant than the first encapsulant, and wherein the second encapsulant includes a trapezoidal portion over the antenna.
A semiconductor device, comprising:
- a substrate including an antenna formed in a first area of the substrate, wherein a thickness of the first area of the substrate is greater than a thickness of a second area of the substrate;
- disposing an electrical component over the second area of the substrate;
- depositing a first encapsulant over the electrical component;
- and
- disposing a second encapsulant over the antenna, wherein the second encapsulant includes a higher dielectric constant than the first encapsulant.
Dependencies are inferred from the claim text.