Method of making semiconductor device having a redistribution line
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAnhao CHENG, Chun-Chang LIU, Sheng-Wei YEH
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Abstract
A method of making a semiconductor device includes depositing a first passivation layer over an interconnect structure. The method further includes forming a post passivation interconnect (PPI) line over the first passivation layer. The method further includes depositing a second passivation layer over the PPI line, wherein the second passivation layer is configured to exert stress on the PPI line to form a top-most portion of the PPI line having a first portion having a convex shape, a second portion having a concave shape, and a third portion having the convex shape.
Claims20
A method of making a semiconductor device, the method comprising:
- depositing a first passivation layer over an interconnect structure;
- forming a post passivation interconnect (PPI) line over the first passivation layer;
- and
- depositing a second passivation layer over the PPI line, wherein the second passivation layer is configured to exert stress on the PPI line to form a top-most portion of the PPI line having a first portion having a convex shape, a second portion having a concave shape, and a third portion having the convex shape.
A method of making a semiconductor device, the method comprising:
- depositing a first passivation layer over a substrate;
- depositing a conductive material over the first passivation layer;
- patterning the conductive material to form a post passivation interconnect (PPI) line;
- depositing a second passivation layer over the PPI line to define a top surface of the PPI line having a rounded shape, wherein defining the top surface of the PPI line comprises increasing an angle between a sidewall of the PPI line and a top surface of the first passivation layer.
A method of making a semiconductor device, the method comprising:
- depositing a first passivation layer over a substrate;
- depositing a conductive material over the first passivation layer;
- patterning the conductive material to form a first post passivation interconnect (PPI) line and a second PPI line;
- depositing a second passivation layer over the first PPI line to define a top surface of the first PPI line having a rounded shape, wherein the second passivation layer is continuous over the first PPI line and the second PPI line.
Dependencies are inferred from the claim text.