Integrated substrate, manufacturing method thereof and electronic device

A method for manufacturing an integrated substrate, comprising:

• providing a dielectric substrate having a first surface and a second surface opposite to each other in a thickness direction of the dielectric substrate, wherein the dielectric substrate comprises a first connection via running through the dielectric substrate in the thickness direction of the dielectric substrate;
• forming a pattern comprising a first buffer layer on the first surface through a patterning process, wherein a first hollowed-out pattern of the first buffer layer is the same as a pattern of a first conductive structure to be formed;
• forming a pattern comprising a second buffer layer on the second surface through a patterning process, wherein a second hollowed-out pattern of the second buffer layer is the same as a pattern of a second conductive structures to be formed;
• forming seed layers on a side of the first buffer layer facing away from the first surface, and on a side of the second buffer layer facing away from the second surface, and electroplating the seed layers to form a first conductive layer on the first surface side, a second conductive layer on the second surface side, and a first connection electrode in the first connection via;
• patterning the first conductive layer to form a pattern comprising the first conductive structure;
• and
• patterning the second conductive layer to form a pattern comprising the second conductive structures, wherein the second conductive structure is connected to the first conductive structure through the first connection electrode to form an integral structure.