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US 2026/0282948 A1Published application
Four-pin to-247 encapsulation structure for power gallium nitride hemt device
AssigneeGanext (Zhuhai) Technology Co., Ltd
InventorsWenli ZHANG, Yifeng WU, Dajiang ZHANG
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Abstract
A four-pin TO-247 encapsulation structure for a power gallium nitride HEMT device includes: a conductive chip holder; a planar gallium nitride HEMT chip fixed on a surface of the conductive chip holder, where a gate, a source, and a drain are included on the front surface of the planar gallium nitride HEMT chip; and insertable pins disposed on the same side of the conductive chip holder.
Claims19
A four-pin TO-247 encapsulation structure for a power gallium nitride high electron mobility transistor (HEMT) device, comprising:
- a conductive chip holder;
- a planar gallium nitride HEMT chip fixed on a surface of the conductive chip holder, wherein a gate, a source, and a drain are disposed on a front surface of the planar gallium nitride HEMT chip;
- and
- insertable pins disposed on a same side of the conductive chip holder.
1 more element
Dependencies are inferred from the claim text.