US 2026/0282941 A1 · Method for Forming an Interconnect Structure

Abstract

There is provided a method for forming an interconnect structure for an integrated circuit device. The method includes forming a workpiece for a second interconnect layer on a sacrificial substrate. The workpiece includes at least a first workpiece metal layer epitaxially grown on a growth surface of the sacrificial substrate. The method further includes bonding the workpiece to an initial interconnect structure of a device wafer. The initial interconnect structure includes a first interconnect layer surrounded by an interlayer dielectric layer. Subsequent to the bonding, the method also includes removing the sacrificial substrate from the first workpiece metal layer. Further, the method includes patterning the workpiece that includes the first workpiece metal layer to form a second interconnect layer over the first interconnect layer.

Claims20

Dependent claims

A method for forming an interconnect structure for an integrated circuit device, the method comprising:

forming a workpiece for a second interconnect layer on a sacrificial substrate, wherein the workpiece comprises at least a first workpiece metal layer epitaxially grown on a growth surface of the sacrificial substrate;
bonding the workpiece to an initial interconnect structure of a device wafer, the initial interconnect structure comprising a first interconnect layer surrounded by an interlayer dielectric layer;
subsequent to the bonding, removing the sacrificial substrate from the first workpiece metal layer;
and
patterning the workpiece comprising the first workpiece metal layer to form a second interconnect layer over the first interconnect layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

19/562,205Filed 10 Mar 2026

Priority

EP 25163700.514 Mar 2025

Published

17 Sep 2026

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

G11C 5/06
Details of stores covered by group G11C11/00: arrangements for interconnecting storage elements electrically, e.g. by wiring
H10W 70/06
Of insulating or insulated package substrates, or of interposers, or of redistribution layers: using temporary auxiliary supports
H10W 20/063
Of conductive parts of the interconnections: by forming conductive members before forming protective insulating material
H10W 20/069
Of conductive parts of the interconnections: by forming self-aligned vias or self-aligned contact plugs

Method for Forming an Interconnect Structure

Life of this patent

Method for Forming an Interconnect Structure

Life of this patent

Abstract

Claims20