Method for fabricating physically unclonable function device
AssigneeUnited Microelectronics Corp.
InventorsHung-Chan Lin, Chang-Yih Chen
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Abstract
A method for fabricating a physically unclonable function (PUF) device includes the steps of firs providing a substrate comprising a magnetoresistive random access memory (MRAM) region, a PUF cell region, and a non-PUF cell region, forming a first metal interconnection on the MRAM region, forming a second metal interconnection on the PUF cell region, and forming a third metal interconnection on the non-PUF cell region. Preferably, the first metal interconnection and the second metal interconnection include patterns of different shapes and the first metal interconnection and the third metal interconnection include patterns of same shape.
Claims7
A method for fabricating a physically unclonable function (PUF) device, comprising:
- providing a substrate comprising a magnetoresistive random access memory (MRAM) region and a PUF cell region;
- forming a first metal interconnection on the MRAM region;
- and
- forming a second metal interconnection on the PUF cell region, wherein the first metal interconnection and the second metal interconnection comprise patterns of different shapes under a top view perspective.
Dependencies are inferred from the claim text.