Semiconductor device

A semiconductor device comprising:

• a substrate;
• a first power supply line extending in a first direction in plan view on a first surface of the substrate;
• a first semiconductor layer and a second semiconductor layer provided on a second surface of the substrate opposite to the first surface and arranged side by side in the first direction overlapping the first power supply line in plan view;
• a first through via formed in the substrate and connecting the first power supply line and the second semiconductor layer;
• a third semiconductor layer formed above the first semiconductor layer;
• a fourth semiconductor layer formed above the second semiconductor layer;
• a first gate formed between the first semiconductor layer and the second semiconductor layer and between the third semiconductor layer and the fourth semiconductor layer;
• a first transistor having the first semiconductor layer, the second semiconductor layer, and the first gate;
• a first conductive wall and a second conductive wall shifted in a second direction different from the first direction from the first power supply line in plan view, and extending in the first direction on the second surface;
• and
• a first wiring connecting the first conductive wall and the first semiconductor layer.