Dual Guard Ring Design for Through Via

A device structure comprising:

• a first chip attached to a second chip;
• a through via disposed in an insulation layer, wherein the through via is electrically connected to the first chip and the second chip;
• and
• a guard ring structure disposed in the insulation layer and around the through via, wherein the guard ring structure includes:
• a primary guard ring, and
• a secondary guard ring adjacent to and discrete from the primary guard ring, wherein the secondary guard ring overlaps a first gap in the primary guard ring, the primary guard ring overlaps a second gap in the secondary guard ring, and the first gap is not overlapped by the second gap.

A method comprising:

• forming a multilayer interconnect structure;
• forming a guard ring structure and a through via landing pad while forming the multilayer interconnect structure, wherein the forming of the multilayer interconnect structure and the forming of the guard ring structure includes performing a lithography process, an etching process, and a deposition process, wherein the guard ring structure forms a ring around a region of an insulation layer and the guard ring structure includes:
• a primary guard ring, and
• a secondary guard ring adjacent to the primary guard ring, discrete from the primary guard ring, and overlapping a gap in the primary guard ring;
• and
• forming a through via that extends through the region of the insulation layer to the through via landing pad, wherein the gap in the primary guard ring corresponds with a sidewall portion of the through via that is not overlapped by the primary guard ring.