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US 2026/0282852 A1Published application
Forming notches on wafer sidewall for wafer cut
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Tung-Liang Shao
Life of this patent
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Abstract
A method includes implanting a substrate with a dopant to form an implanted layer in the substrate, and the implanted layer is at an intermediate level between a top surface and a bottom surface of the substrate. A laser beam is projected on the implanted layer, and is projected on a sidewall of the substrate. After the laser beam is projected, the substrate is heated, so that the substrate is cut at the implanted layer, and is cut into a top portion and a bottom portion.
Claims20
A method comprising:
- forming a wafer comprising a substrate;
- rotating the wafer;
- when the wafer is rotated, forming a notch ring at an edge of the substrate;
- and
- after the notch ring is formed, heating the substrate, so that the substrate is cut at the notch ring, wherein the substrate is cut into a top portion and a bottom portion.
2 more elements
A method comprising:
- rotating a wafer, wherein the wafer has a round top-view shape;
- forming a high-stressed region forming a ring proximate a round edge of the wafer, wherein the high-stressed region encircles a round inner region of the wafer;
- and
- heating the wafer to separate the wafer at the high-stressed region.
1 more element
A method comprising:
- bonding a top wafer to a bottom wafer to form a composite wafer, wherein the top wafer comprises a substrate;
- forming a high-stressed region in the substrate;
- and
- heating the composite wafer to form a crack at the high-stressed region, wherein the crack is propagated throughout the substrate to separate the top wafer into a top portion and a bottom portion.
1 more element
Dependencies are inferred from the claim text.