Method and apparatus for hybrid bonding

A semiconductor equipment, comprising:

• a controller configured to
• control a measurement system to measure an electrical characteristic distribution for each of a first wafer and multiple second wafers, the electrical characteristic distribution of each wafer indicating at least one of a distribution of saturation current values of dies of the respective wafer, a distribution of cut-off current values of the dies of the respective wafer, and a distribution of ring oscillator data of the dies of the respective wafer;
• based on the electrical characteristic distributions of the first wafer and the multiple second wafers, control a die pairing system to execute a die pairing process that selects a plurality of dies from the multiple second wafers and pairs the selected plurality of dies with the dies of the first wafer to form a plurality of groups of dies;
• and
• control a bonding system to perform a pick-and-place die-to-chip bonding process to bond the plurality of groups of dies.