Crystal evaluation method
AssigneeKioxia Corporation
InventorsKyosuke YOSHIOKA, Yurika KANNO
Life of this patent
Estimating the term…
Abstract
In one embodiment, a crystal evaluation method includes forming, above a first substrate, a semiconductor layer that includes an amorphous layer containing metal atoms, the semiconductor layer including a first portion and a second portion. The method further includes crystallizing the first portion from the amorphous layer into a crystalline layer. The method further includes treating the semiconductor layer with a chemical liquid that dissolves at least a part of the first portion or the second portion. The method further includes determining a crystallization state of the semiconductor layer after the treatment.
Claims20
A crystal evaluation method comprising:
- forming, above a first substrate, a semiconductor layer that includes an amorphous layer containing metal atoms, the semiconductor layer including a first portion and a second portion;
- crystallizing the first portion from the amorphous layer into a crystalline layer;
- and
- treating the semiconductor layer with a chemical liquid that dissolves at least a part of the first portion or the second portion;
- and
- determining a crystallization state of the semiconductor layer after the treatment.
A crystal evaluation method comprising:
- forming, above a first substrate, a semiconductor layer including an amorphous layer;
- crystallizing at least a portion of the semiconductor layer from the amorphous layer to a crystalline layer;
- and
- treating the semiconductor layer with a chemical liquid that dissolves at least a part of the crystalline layer;
- and
- determining a crystallization state of the semiconductor layer after the treatment.
Dependencies are inferred from the claim text.