Heater plate with different emissivity for temperature uniformity

A cluster platform comprising:

• a plurality of process modules;
• a load-lock module comprising:
• a first gate valve connectable to an equipment front-end module;
• a second gate valve connectable to a substrate handling chamber;
• and
• a heater plate comprising:
• a surface having a center region with a center region emissivity and a peripheral region with a peripheral region emissivity;
• and
• heating elements in a body of the heater plate, wherein the peripheral region emissivity is greater than the center region emissivity;
• and
• a substrate handling chamber including a first robotic arm configured to move wafers between the process modules and the load-lock module.

A process module comprising:

• process equipment configured to perform a semiconductor-related process at an elevated temperature;
• and
• a heater plate comprising:
• a surface having a center region with a center region emissivity and a peripheral region with a peripheral region emissivity;
• and
• heating elements in a body of the heater plate,
• wherein the peripheral region emissivity is greater than the center region emissivity.