Substrate processing apparatus, substrate processing method and method of fabricating semiconductor device

A substrate processing apparatus comprising:

• a process chamber including a gas supply region, a plasma generation region, a gas mixing region, and a processing region;
• a first analyzer which is connected to the process chamber and configured to measure a composition rate of a process etchant provided in the processing region;
• and
• a controller configured to perform a process control based on a process result according to the composition rate of the process etchant measured by the first analyzer.

A substrate processing apparatus comprising:

• a chamber body including a gas supply region, a plasma generation region, a gas mixing region, and a processing region;
• a pump which is connected to the chamber body and configured to adjust a pressure inside the chamber body;
• a liner provided in the chamber body and defining the processing region;
• a substrate support provided in the processing region and on which a substrate is disposed;
• a first gas supplier configured to supply a first process gas into the chamber body;
• a gas supply plate configured to provide the first process gas, which is provided from the first gas supplier, to the gas supply region;
• an upper electrode plate configured to provide the first process gas, which is provided from the gas supply region, to the plasma generation region;
• a lower electrode plate configured to provide at least a part of plasma generated in the plasma generation region to the gas mixing region to generate a preliminary etchant;
• a second gas supplier configured to supply a second process gas into the gas mixing region;
• a showerhead configured to supply, onto the substrate, a process etchant generated from the plasma, the process etchant comprising a first etchant and a second etchant;
• a first analyzer which is connected to the chamber body and configured to measure a composition rate of the process etchant provided in the processing region;
• and
• a controller configured to perform a process control based on a process result according to the composition rate of the process etchant measured by the first analyzer.