Batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations

A system for substrate processing, comprising:

• a dual-chamber body comprising:
• a first processing volume on a first side of a reference plane,
• a second processing volume on a second side of the reference plane,
• a first plurality of gas inject passages formed in the dual-chamber body and in fluid communication with the first processing volume, and
• a second plurality of gas inject passages formed in the dual-chamber body and in fluid communication with the second processing volume,
• a first substrate support positioned in the first processing volume;
• a second substrate support positioned in the second processing volume;
• and
• a shared gas panel in fluid communication with both the first plurality of gas inject passages and the second plurality of gas inject passages.

A system for substrate processing, comprising:

• a dual-chamber body comprising:
• a first processing volume on a first side of a reference plane,
• a second processing volume on a second side of the reference plane,
• a body section between the first processing volume and the second processing volume, the reference plane extending along the body section, and
• a plurality of gas injects passages formed in the body section of the dual-chamber body, the plurality of gas injects passages respectively in fluid communication with the first processing volume and the second processing volume, and
• a first substrate support positioned in the first processing volume;
• a second substrate support positioned in the second processing volume;
• and
• a controller comprising instructions that, when executed, cause a plurality of operations to be conducted, the plurality of operations comprising:
• simultaneously supplying one or more process gases to the first processing volume and the second processing volume.