Etching method, etching apparatus, and method of manufacturing semiconductor device
OwnerWu LI, Atsushi TERUYA +3inventors
InventorsWu LI, Atsushi TERUYA, Toshiyuki SASAKI, Shuichi KUBOI, Kota TAMURA
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Abstract
A method for semiconductor device manufacturing and the like incorporates a high etch rate etching process. According to one embodiment, an etching method includes introducing a gas into a chamber comprising a first substance with hydrogen or a halogen component and a second substance comprising a hydroxy group. A plasma is generated in the chamber while a molecular density ratio of HF to H2O in the chamber is kept at 0.3 or higher. A workpiece is then plasma etched while being cooled to a temperature of 0° C. or less.
Claims20
An etching method, comprising:
- introducing a gas into a chamber, the gas comprising a first substance and a second substance, the first substance including at least one of hydrogen or a halogen, the second substance including a hydroxy group;
- generating plasma in the chamber with the gas therein while maintaining a molecular density ratio of HF to H2O (HF/H2O) for the gas in the chamber at 0.3 or higher;
- and
- plasma etching a portion of a layer on a workpiece in the chamber while the workpiece is being cooled to a temperature of 0° C. or less, the layer comprising silicon.
An etching apparatus, comprising:
- a chamber;
- a supplier that introduces, into the chamber, a gas into the chamber, a first substance and a second substance, the first substance including at least one of hydrogen or a halogen, the second substance including a hydroxy group;
- electrodes to generate plasma in the chamber from the gas by applying an AC voltage;
- a refrigerant pipe in the chamber and configured to cool a workpiece to a temperature of 0° C. or less;
- a power source that supplies the AC voltage to the electrodes;
- a mass spectrometer that measures a molecular density ratio of HF to H2O (HF/H2O) for the gas in the chamber;
- and
- a controller configured to generate the plasma in the chamber while maintaining the molecular density ratio of the gas in the chamber at 0.3 or higher.
A method for manufacturing a semiconductor device, the method comprising:
- introducing a gas into a chamber, the gas comprising a first substance and a second substance, the first substance including at least one of hydrogen or a halogen, the second substance including a hydroxy group;
- generating a plasma in the chamber with the gas therein while maintaining a molecular density ratio of HF to H2O (HF/H2O) for the gas in the chamber at 0.3 or higher;
- and
- plasma etching a portion of a workpiece being cooled at to a temperature of 0° C. or less in the chamber, wherein
- the workpiece includes:
- a substrate;
- a stacked body on the substrate, the stacked body including a first stacked portion and a second stacked portion formed by alternatingly stacked first layers comprising silicon and nitrogen and second layers comprising silicon and oxygen, the first and second layers being stacked in a first direction on the substrate, the second stacked portion being at an end of the first stacked portion in a second direction perpendicular to the first direction, the second stacked portion having a stepwise structure, with respect to the first stacked portion, towards the substrate in the first direction;
- and
- a third layer on the second stacked portion, the third layer comprising silicon and oxygen, and
- a first opening along the first direction in the first stacked portion being simultaneously formed in the plasma etching with a second opening along the first direction in the third layer.
Dependencies are inferred from the claim text.