Metal etch
AssigneeLam Research Corporation
InventorsYiwen FAN, Wenbing YANG, Ran LIN, Samantha SiamHwa TAN, Timothy William WEIDMAN, Tamal MUKHERJEE
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Abstract
A method for etching a metal containing material is provided. The metal containing material is exposed to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material. The metal halide material is exposed to a ligand containing fluid or plasma, wherein at least some of the metal halide material is formed into a metal halide ligand complex. At least some of the metal halide ligand complex is vaporized.
Claims18
A method for etching a metal containing material, comprising:
- exposing the metal containing material to a halogen containing fluid or plasma formed from the halogen containing fluid to convert at least some of the metal containing material into a metal halide material;
- exposing the metal halide material to a ligand containing fluid or plasma formed from the ligand containing fluid, wherein at least some of the metal halide material is formed into a metal halide ligand complex, wherein the ligand containing fluid comprises a ligand containing gas or vapor comprising at least one of H2O, CO, CO2, CH3OH, OH, NH3, PF3, PCl5, and PCl3;
- and
- vaporizing at least some of the metal halide ligand complex.
A method for etching a metal containing material, comprising:
- exposing the metal containing material to an etching fluid or plasma comprising phosphorus and chlorine to form the metal into a metal phosphorus chloride ligand complex;
- and
- vaporizing at least some of the metal phosphorus chloride ligand complex.
Dependencies are inferred from the claim text.