Semiconductor device

A semiconductor device, comprising:

• an insulating substrate having a first side, a second side opposite to the first side in a first direction, a third side, and a fourth side opposite to the third side in a second direction perpendicular to the first direction;
• a first terminal provided on a side of the first side;
• a second terminal provided on the side of the first side;
• an output terminal provided on a side of the second side;
• a first metal layer provided on the insulating substrate, including a first region and a second region, and electrically connected to the first terminal in the first region;
• a second metal layer provided on the insulating substrate, including a third region, and electrically connected to the second terminal in the third region;
• a third metal layer provided on the insulating substrate, including a fourth region, a fifth region, and a sixth region, and electrically connected to the output terminal in the fourth region, the sixth region being provided between the second region and the first side and the fifth region being provided between the second region and the third side;
• a first semiconductor chip group provided on the second region and including a plurality of semiconductor chips arranged in a matrix in the first and second directions, each semiconductor chip having a first upper electrode and a first lower electrode, the first upper electrode being electrically connected to the third metal layer, and the first lower electrode being electrically connected to the first metal layer;
• and
• a second semiconductor chip group provided on the sixth region and including a plurality of semiconductor chips arranged in a matrix in the first and second directions, each semiconductor chip having a second upper electrode and a second lower electrode, the second upper electrode being electrically connected to the second metal layer, and the second lower electrode being electrically connected to the third metal layer,
• wherein the first semiconductor chip group includes a first semiconductor chip closest to the first side and the third side in the first semiconductor chip group,
• the second semiconductor chip group includes a second semiconductor chip closest to the second side and the third side in the second semiconductor chip group and a third semiconductor chip adjacent to the second semiconductor chip in the second direction,
• a first distance between the first semiconductor chip and the third side in the second direction is larger than a second distance between the second semiconductor chip and the third side in the second direction, and
• the first distance is smaller than a third distance between the third semiconductor chip and the third side in the second direction.