Channel-all-around structure-applied three-dimensional monolithic complementary transistor

A three-dimensional monolithic complementary transistor comprising:a gate electrode extending in a first direction to an upper surface of a substrate;a plurality of first channel layers spaced apart from each other along the first direction of the gate electrode, and disposed on the substrate so as to be adjacent to a lower region of the gate electrode;a second channel layer surrounding an upper surface and one region of side surfaces of the gate electrode;a drain electrode disposed on the substrate to come into contact with the first channel layers and the second channel layer;a first source electrode disposed on the substrate to come into contact only with the first channel layers between the first channel layers and the second channel layer;

• anda second source electrode disposed on the second channel layer to come into contact only with the second channel layer between the first channel layers and the second channel layer.