Heterogeneously integrated ga2o3 high-mobility inverter and preparation method thereof

A preparation method of a heterogeneously integrated Ga2O3 high-mobility inverter, comprising the following steps:

• S1:
• preparing an unintentionally doped β-Ga2O3 drift layer on a semi-insulating β-Ga2O3 substrate by metal-organic chemical vapor deposition (MOCVD);
• S2:
• sequentially preparing a κ-Ga2O3 layer and a κ-(AlxGa1-x)2O3 layer on a surface of the unintentionally doped β-Ga2O3 drift layer by lift-off and transfer technology or epitaxial growth, and forming a two-dimensional electron gas between the κ-Ga2O3 layer and the κ-(AlxGa1-x)2O3 layer in a polarization-induced manner;
• S3:
• etching a middle portion of a surface of the κ-(AlxGa1-x)2O3 layer by reactive ion etching-inductively coupled plasma (RIE-ICP) etching until reaching a surface of the semi-insulating β-Ga2O3 substrate, so as to form an isolation trench;
• S4:
• defining a depletion-mode drain region, a depletion-mode source region, an enhancement-mode drain region, and an enhancement-mode source region on the surface of the κ-(AlxGa1-x)2O3 layer by photolithography;
• and sequentially growing a Ti metal layer, an Au metal layer, and an Ni metal layer by electron beam evaporation to form a depletion-mode drain metal layer, a depletion-mode source metal layer, an enhancement-mode drain metal layer, and an enhancement-mode source metal layer, wherein the depletion-mode drain metal layer, the depletion-mode source metal layer, the enhancement-mode drain metal layer, and the enhancement-mode source metal layer form ohmic contacts with the κ-(AlxGa1-x)2O3 layer, respectively;
• S5:
• defining a depletion-mode gate region on the surface of the κ-(AlxGa1-x)2O3 layer by photolithography;
• and sequentially growing a Pt metal layer and an Au metal layer by electron beam evaporation to form a depletion-mode gate metal layer, wherein the depletion-mode gate metal layer forms a Schottky contact with the κ-(AlxGa1-x)2O3 layer;
• S6:
• defining an enhancement-mode gate region on the surface of the κ-(AlxGa1-x)2O3 layer by photolithography, and growing a p-type hetero-material layer by magnetron sputtering;
• S7:
• sequentially growing a Pt metal layer and an Au metal layer on a surface of the p-type hetero-material layer by means of self-alignment by electron beam evaporation, so as to form an enhancement-mode gate metal layer;
• S8:
• sequentially growing a Ti metal layer and an Au metal layer on the depletion-mode drain metal layer, the depletion-mode source metal layer, the depletion-mode gate metal layer, the enhancement-mode drain metal layer, the enhancement-mode source metal layer, and the enhancement-mode gate metal layer respectively by electron beam evaporation, so as to form pads, wherein the depletion-mode source metal layer and the enhancement-mode drain metal layer are interconnected via the pads and are jointly connected to the depletion-mode gate metal layer, so as to obtain the heterogeneously integrated Ga2O3 high-mobility inverter.