Chip, method for manufacturing chip, and electronic device

An electronic device, comprising a circuit board and a chip, wherein the chip is disposed on the circuit board, wherein the chip comprises a transistor, a metal silicide layer, an etching stop layer, an interlayer dielectric layer, a plurality of first contact holes that are sequentially stacked, and a barrier layer, wherein:

• the transistor comprises a source and a drain, the metal silicide layer is disposed at least on the source and the drain, each of the plurality of first contact holes penetrates the etching stop layer and the interlayer dielectric layer, the source overlaps with a first orthographic projection that is of at least one first contact hole in the plurality of first contact holes and that is on a substrate, and the drain overlaps with a second orthographic projection that is of at least one first contact hole in the plurality of first contact holes and that is on the substrate;
• and
• the barrier layer is disposed between the metal silicide layer and the etching stop layer, and an etching rate of the etching stop layer is greater than an etching rate of the barrier layer under an etching condition of the etching stop layer.