Method of manufacturing semiconductor device including buried connector
AssigneeSamsung Electronics Co., Ltd.
InventorsHYUNGJOO NA, WOO BIN SONG, JIN-WOOK YANG, CHEOLJIN YUN, YOSHINAO HARADA
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Abstract
A method of manufacturing a semiconductor device includes forming a source/drain pattern and a channel pattern on an upper surface of a substrate, forming a through pattern extending through the source/drain pattern, forming an active contact on the through pattern, and forming a buried connector on a bottom surface of the substrate, where the upper surface and the bottom surface of the substrate are opposite each other and the buried connector is formed to be connected to the through pattern.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a source/drain pattern and a channel pattern on an upper surface of a substrate;
- forming a through pattern extending into the source/drain pattern;
- forming an active contact on the through pattern;
- and
- forming a buried connector on a bottom surface of the substrate,
- wherein the upper surface and the bottom surface of the substrate are opposite each other, and
- wherein the buried connector is formed to be connected to the through pattern.
A method of manufacturing a semiconductor device, comprising:
- forming a stacked pattern on an upper surface of a substrate;
- forming a recess by etching the stacked pattern;
- forming a source/drain pattern in the recess;
- forming an interlayer insulating layer on the source/drain pattern;
- forming a via recess extending into the source/drain pattern by penetrating the interlayer insulating layer;
- forming a liner layer covering a lower portion of the via recess;
- forming sequentially a through pattern and a via insulating pattern in the via recess;
- and
- forming a buried connector by etching the substrate from a bottom surface of the substrate.
A method of manufacturing a semiconductor device, comprising:
- forming a stacked pattern on an upper surface of a substrate;
- forming a recess and a channel pattern by etching the stacked pattern;
- forming a source/drain pattern in the recess;
- forming a through pattern extending into the source/drain pattern;
- forming a gate electrode on the channel pattern;
- forming an active contact on the through pattern and a gate contact on the gate electrode;
- forming a metal layer on the active contact and the gate contact;
- performing a planarization process on a bottom surface of the substrate;
- forming a buried connector by etching the substrate from the bottom surface of the substrate;
- and
- forming a power transmission network layer electrically connected to the buried connector.
Dependencies are inferred from the claim text.