Non-epitaxial electrical coupling between a front side trench connector and back side contacts of a transistor

A method of forming an integrated circuit structure, the method comprising:

• forming a nanosheet surrounded by a gate;
• forming a conductive layer below the gate;
• forming a trench connector directly electrically coupled with the nanosheet;
• and
• forming a connector directly electrically coupled with the trench connector, wherein the connector comprises metal, and wherein the connector has a bottom surface in direct contact with the conductive layer.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a gate;
• a nanosheet surrounded by the gate;
• a conductive layer below the gate;
• a trench connector directly electrically coupled with the nanosheet;
• and
• a connector directly electrically coupled with the trench connector, wherein the connector comprises metal, and wherein the connector has a bottom surface in direct contact with the conductive layer.