US 2026/0282409 A1Published application

Semiconductor device

AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation

InventorsYoko IWAKAJI, Kenichi MATSUSHITA, Takahiro KATO

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Abstract

A semiconductor part includes a first semiconductor layer, a second semiconductor layer positioned between a first electrode and the first semiconductor layer in the transistor region, a third semiconductor layer positioned between the first semiconductor layer and a second electrode in the transistor region, a fourth semiconductor layer positioned between the third semiconductor layer and the second electrode in the transistor region, a fifth semiconductor layer positioned between the first semiconductor layer and the third semiconductor layer in the transistor region, a sixth semiconductor layer positioned between the first electrode and the first semiconductor layer in the diode region, and a seventh semiconductor layer positioned between the first semiconductor layer and the second electrode in the diode region. A first-conductivity-type impurity concentration of the fifth semiconductor layer positioned in a second region is greater than a first-conductivity-type impurity concentration of the fifth semiconductor layer positioned in a first region.

Claims14

Dependent claims

A semiconductor device, comprising:

a first electrode;
a second electrode;
a semiconductor part positioned between the first electrode and the second electrode in a first direction, the semiconductor part including
a transistor region, and
a diode region adjacent to the transistor region in a direction crossing the first direction;
and
a third electrode positioned in the semiconductor part,
the semiconductor part including
a first semiconductor layer positioned in the transistor region and the diode region, the first semiconductor layer being of a first conductivity type,
a second semiconductor layer positioned between the first electrode and the first semiconductor layer in the transistor region, the second semiconductor layer being of a second conductivity type,
a third semiconductor layer positioned between the first semiconductor layer and the second electrode in the transistor region, the third semiconductor layer being of the second conductivity type and being electrically connected with the second electrode,
a fourth semiconductor layer positioned between the third semiconductor layer and the second electrode in the transistor region, the fourth semiconductor layer being of the first conductivity type and being electrically connected with the second electrode,
a fifth semiconductor layer positioned between the first semiconductor layer and the third semiconductor layer in the transistor region, the fifth semiconductor layer being of the first conductivity type and having a higher first-conductivity-type impurity concentration than the first semiconductor layer,
a sixth semiconductor layer positioned between the first electrode and the first semiconductor layer in the diode region, the sixth semiconductor layer being of the first conductivity type and having a higher first-conductivity-type impurity concentration than the first semiconductor layer, and
a seventh semiconductor layer positioned between the first semiconductor layer and the second electrode in the diode region, the seventh semiconductor layer being of the second conductivity type and being electrically connected with the second electrode,
the transistor region including
a first region, and
a second region positioned between the first region and the diode region in the direction crossing the first direction,
a first-conductivity-type impurity concentration of the fifth semiconductor layer positioned in the second region being greater than a first-conductivity-type impurity concentration of the fifth semiconductor layer positioned in the first region.

16 more elements

A semiconductor device, comprising:

a first electrode;
a second electrode;
a semiconductor part positioned between the first electrode and the second electrode in a first direction, the semiconductor part including
a transistor region, and
a diode region adjacent to the transistor region in a direction crossing the first direction;
and
a third electrode positioned in the semiconductor part,
the semiconductor part including
a first semiconductor layer positioned in the transistor region and the diode region, the first semiconductor layer being of a first conductivity type,
a second semiconductor layer positioned between the first electrode and the first semiconductor layer in the transistor region, the second semiconductor layer being of a second conductivity type,
a third semiconductor layer positioned between the first semiconductor layer and the second electrode in the transistor region, the third semiconductor layer being of the second conductivity type and being electrically connected with the second electrode,
a fourth semiconductor layer positioned between the third semiconductor layer and the second electrode in the transistor region, the fourth semiconductor layer being of the first conductivity type and being electrically connected with the second electrode,
a fifth semiconductor layer positioned between the first semiconductor layer and the third semiconductor layer in the transistor region, the fifth semiconductor layer being of the first conductivity type and having a higher first-conductivity-type impurity concentration than the first semiconductor layer,
a sixth semiconductor layer positioned between the first electrode and the first semiconductor layer in the diode region, the sixth semiconductor layer being of the first conductivity type and having a higher first-conductivity-type impurity concentration than the first semiconductor layer, and
a seventh semiconductor layer positioned between the first semiconductor layer and the second electrode in the diode region, the seventh semiconductor layer being of the second conductivity type and being electrically connected with the second electrode,
the transistor region including
a first region, and
a second region positioned between the first region and the diode region in the direction crossing the first direction,
a thickness in the first direction of the fifth semiconductor layer positioned in the second region being greater than a thickness in the first direction of the fifth semiconductor layer positioned in the first region.

16 more elements

Dependencies are inferred from the claim text.