Systems and methods for control of power switching devices

Abstract

A system and method for modelling a temperature rise in a power switching device are described herein. In some approaches, a system for modelling a temperature rise within a transistor includes a measurement circuit, a power calculation circuit, a thermal modeling circuit and a control circuit. The measurement circuit is configured to measure a voltage across the transistor and a current passing through the transistor. The power calculation circuit is configured to multiply the measured current and the measured voltage to generate a signal representing a power dissipated within the transistor. The thermal modeling circuit is configured to generate an output signal indicative of a die temperature rise in the transistor over a predetermined period and the control circuit is configured to output a trip signal to turn off the transistor in response to determining that the die temperature rise is greater than the predetermined threshold.

Dependencies are inferred from the claim text.