Upper arm drive circuit and power conversion device
AssigneeMinebea Power Semiconductor Device Inc.
InventorsSatoshi IESAKA, Kenji SAKURAI, Yoshiro MATSUMOTO
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AssigneeMinebea Power Semiconductor Device Inc.
InventorsSatoshi IESAKA, Kenji SAKURAI, Yoshiro MATSUMOTO
Estimating the term…
An upper arm drive circuit includes a first switching element connected between a gate electrode of an upper arm switching element and a main electrode on a reference potential side of an upper arm switching element. A second switching element having a drain electrode is connected to the gate electrode of the upper arm switching element. First and second diodes are arranged between the drain electrode and the gate electrode of the upper arm switching element, the first and second diodes being arranged in series with cathodes on a side of the second switching element and anodes on a side of the upper arm switching element. A withstand voltage of the second diode is lower than that of the first diode. A recovery current of the second diode is lower than that of the first diode. A withstand voltage of the first diode ranges from 60 to 100 V.
An upper arm drive circuit that drives an upper arm switching element of a power conversion circuit, the upper arm drive circuit comprising:
An upper arm drive circuit that drives an upper arm switching element of a power conversion circuit, the upper arm drive circuit comprising:
Dependencies are inferred from the claim text.