Laser wafer with an array of active regions having different reflectivities created using a focused ion beam tool

A method, comprising:

• forming a first distributed Bragg reflector (DBR) on a substrate of a semiconductor wafer;
• creating a first active region and a second active region on the first DBR, the first active region and the second active region including a base material;
• introducing, using a focused ion beam tool, a first concentration of a doped material to the first active region, the first concentration of the doped material to reflect at a first wavelength;
• introducing, using the focused ion beam tool, a second concentration of the doped material to the second active region, the second concentration of the doped material to reflect at a second wavelength, wherein the first concentration and the second concentration are different and the first wavelength and the second wavelength are different;
• forming a second DBR on the first active region and the second active region;
• and
• adding a contact layer on the second DBR.

A semiconductor wafer, created by a process comprising:

• forming a first distributed Bragg reflector (DBR) on a substrate of a semiconductor wafer;
• creating a first active region and a second active region on the first DBR, the first active region and the second active region including a base material;
• introducing, using a focused ion beam tool, a first concentration of a doped material to the first active region, the first concentration of the doped material to reflect at a first wavelength;
• introducing, using the focused ion beam tool, a second concentration of the doped material to the second active region, the second concentration of the doped material to reflect at a second wavelength, wherein the first concentration and the second concentration are different and the first wavelength and the second wavelength are different;
• forming a second DBR on the first and second active regions;
• and
• adding a contact layer on the second DBR.