Light-emitting semiconductor device, optoelectronic component, projection device and electronic device

An optoelectronic component comprising:

• a semiconductor layer stack comprising a first semiconductor layer of a first conductivity type, an active zone for generating electromagnetic radiation, and a second semiconductor layer of a second conductivity type, the semiconductor layer stack being patterned to a plurality of ridges;
• a plurality of current spreading layers arranged over a first main surface of the ridges and electrically connected to the first semiconductor layer in the respective ridge;
• a dielectric layer over the current spreading layers;
• sections of a metal layer which are arranged to face a corresponding one of the current spreading layers, respectively, wherein the dielectric layer is arranged between the current spreading layer and the section of the metal layer;
• and
• a readout circuitry electrically connectable to the sections of the metal layer and configured to read out a capacitance between the section of the metal layer and the corresponding current spreading layer.

A method for determining a temperature of a light-emitting semiconductor device comprising:

• a semiconductor layer stack comprising a first semiconductor layer of a first conductivity type, an active zone for generating electromagnetic radiation, and a second semiconductor layer of a second conductivity type;
• a current spreading layer over a surface of the semiconductor layer stack and electrically connected to the first semiconductor layer;
• a metal layer arranged to face at least a portion of the current spreading layer;
• and
• a dielectric layer between the current spreading layer and the metal layer,
• the method comprising:
• determining a capacitance of a capacitor comprising the metal layer, the dielectric layer and the current spreading layer, and
• determining a temperature of the semiconductor layer stack on the basis of the determined capacitance.