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US 2026/0279742 A1Published application
Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsKoki MUKAIYAMA, Maju TOMURA, Yoshihide KIHARA
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Abstract
An etching method includes: (a) providing a substrate including a base film and a mask having an opening and formed on the base film; (b) etching the base film using plasma; and (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.
Claims20
An etching method comprising:
- (a) providing a substrate including a base film and a mask formed on the base film, the mask having an opening;
- (b) etching the base film using plasma;
- and
- (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.
1 more element
Dependencies are inferred from the claim text.