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US 2026/0279715 A1Published application
Multi-beam charged particle microscope for inspection with reduced charging effects
OwnerStefan SCHUBERT, Thomas DIETERLE +2inventors
InventorsStefan SCHUBERT, Thomas DIETERLE, Bjoern MIKSCH, Ingo MUELLER
Life of this patent
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Abstract
A multi-beam charged particle system and a method of operating a multi-beam charged particle system reduce the impact of charging. Surface charge present on a surface of a sample, which is for example generated during a first image scanning operation, is compensated during a second scanning operation in mirror mode for charge compensation.
Claims20
A method of operating a multi-beam charged particle beam system, the method comprising:
- performing a first scanning operation comprising setting a first, positive voltage difference so that primary charged particle beamlets generated by the multi-beam charged particle beam system reach a surface of a sample with a landing energy within a range of landing energies, wherein a secondary and backscattered electron yield due to the primary charged particle beamlets reaching the surface of the sample exceeds an incident beam current of the primary charged particles at the surface of the sample, thereby generating image data and positive surface charges at least at regions of the surface of the sample;
- and
- performing a second scanning operation comprising setting a second, negative voltage difference so that primary charged particle beamlets generated by the multi-beam charged particle beam system:
- i) are reverted in a propagation direction before reaching uncharged regions of the surface of the sample;
- and ii) reach the surface of the sample at the regions where the positive surface charges are generated during the first scanning operation.
2 more elements
A multi-beam charged particle beam system, comprising:
- an emitter configured to generate primary charged particles;
- an emitter voltage supply connected to the emitter to provide a voltage to the emitter;
- a sample voltage supply configured to provide a sample voltage a sample in the multi-beam charged particle beam system;
- and
- a control unit configured to adjust the emitter voltage and/or the sample voltage,
- wherein the control unit comprises a memory configured to store software instructions and an operation processor configured to execute the software instructions so that, when the software instructions are executed, the multi-beam charged particle beam system performs:
- a first scanning operation comprising setting a first, positive voltage difference so that primary charged particle beamlets generated by the multi-beam charged particle beam system reach a surface of a sample with a landing energy within a range of landing energies, wherein a secondary and backscattered electron yield due to the primary charged particle beamlets reaching the surface of the sample exceeds an incident beam current of the primary charged particles at the surface of the sample, thereby generating image data and positive surface charges at least at regions of the surface of the sample;
- and
- a second scanning operation comprising setting a second, negative voltage difference so that primary charged particle beamlets generated by the multi-beam charged particle beam system:
- i) are reverted in a propagation direction before reaching uncharged regions of the surface of the sample;
- and ii) reach the surface of the sample at the regions where the positive surface charges are generated during the first scanning operation.
8 more elements
A method of inspecting a FinFET using a multi-beam charged particle beam system, the method comprising:
- performing a first scanning operation step comprising setting a first, positive voltage difference so that primary charged particle beamlets generated by the multi-beam charged particle system reach a surface of the FinFET with a landing energy within a range of landing energies, wherein a secondary and backscattered electron yield due to the primary charged particle beamlets reaching the surface of the sample exceeds an incident beam current of the primary charged particles at the surface of the sample, thereby generating image data and generating positive surface charges at least at regions of an insulator of the FinFET;
- and
- performing a second scanning operation comprising setting a second, negative voltage difference so that primary charged particle beamlets generated by the multi-beam charged particle system:
- i) are reverted in a propagation direction before reaching uncharged regions of the surface of the FinFET;
- and ii) reach the insulator where the positive surface charges are generated during the first scanning operation.
2 more elements
Dependencies are inferred from the claim text.